AOC3860A general d escription product summary v ss r ss(on) (at v gs =4.5v) < 3.5m? r ss(on) (at v gs =4.0v) < 3.7m? r ss(on) (at v gs =3.8v) < 3.75m? r ss(on) (at v gs =3.1v) < 4.3m? r ss(on) (at v gs =2.5v) < 5m? applications typical esd protection hbm class 2 symbol 12v common-drain dual n-channel mosfet orderable part number package type form m inimum order quantity 12v units b mc2bonnkgf2cnqleurmnc2onbgxg=5 b gfnr ss(on) ? with esd protection to improve battery performance and safety ? common drain configuration for design simplicity ? rohs and halogen-free compliant ? battery protection switch ? mobile device battery charging and discharging rating jlvut)yj jx.ns3u nuoypleoaaj:) ms.2nfnr22x tyyy parameter absolute maximum ratings t a =25c unless otherwise noted g1 s1 g2 s2 alphadfn ? 3.05x1.77a_6 top view bottom view pin1 top view bottom view pin1 3 1 4 6 s1 s2 g1 g2 s1 s2 pin1 symbol v ss v gs t a =25c i s i sm t a =25c p d t j , t stg symbol t 10s steady-state note 1. i s rated value is based on bare silicon.mounted on 70mmx70mm fr-4 board. note 2. nkhndeynq6n.wx6264n_wc5no5ox2ne9nsslo thermal characteristics w 100 units egwco2nvwcc2bca3vdn note1 rating zwbocwgbnsb_necgcs=2nm2s.2cscwc2nrsb=2 qslwswsnzwbocwgbycgyjs1w2bc -vzh r q ja c/w maximum junction-to-ambient parameter c units power dissipation note1 -55 to 150 25 a gate-source voltage source current(pulse) note2 parameter egwco2yegwco2nggxcs=2 g 8t g typical 40 50 12 2.5 rev.1.0 february 2018 www.aosmd.com page 1 of 5
AOC3860A symbol min typ max units bv sss 12 v 1 t j =55c 5 i gss 10 a v gs(th) gate threshold voltage 0.3 0.6 1.0 v 2.0 2.8 3.5 t j =125c 2.7 3.85 4.8 2.1 2.9 3.7 m? 2.2 2.95 3.75 m? 2.3 3.2 4.3 m? 2.5 3.6 5.0 m? g fs 70 s v fss 0.56 1 v r g 1.2 k? q g 44 nc t d(on) 2 s t r 4.5 s t d(off) 6 s t f 11 s applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. switching parameters v ss =0v, v gs =8v test circuit 2 gate leakage current r ss(on) v ss =v gs, i s =250 m a test circuit 3 v gs =4.5v, i s =5a test circuit 4 m ? v gs =4.0v, i s =5a test circuit 4 dynamic parameters gate resistance f=1mhz turn-off fall time v g1s1 =4.5v, v ss =6v, r l =1.2 w , r gen =3 w test circuit8 forward source to source voltage v gs =3.8v, i s =5a test circuit 4 turn-on rise time forward transconductance i s =1a,v gs =0v test circuit 5 v ss =5v, i s =5a test circuit 3 turn-on delaytime turn-off delaytime static source to source on-resistance v gs =3.1v, i s =5a test circuit 4 v gs =2.5v, i s =5a test circuit 4 v g1s1 =4.5v, v ss =6v, i s =5a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i sss a zero gate voltage source current source -source breakdown voltage i s =250 m a, v gs =0v test circuit 6 v ss =12v, v gs =0v test circuit 1 rev.1.0 february 2018 www.aosmd.com page 2 of 5
AOC3860A typical electrical and thermal characteristics 0 2 4 6 8 1 0 0 0.5 1 1.5 2 i s (a) v gs (volts) figure 2: transfer characteristics 0 1 2 3 4 5 0 2 4 6 8 10 r ss(on) (m w ) i s (a) figure 3: on - resistance vs. source current and 0.8 1 1 . 2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v g s = 2.5v i s =5a v g s = 4.5v i s =5a v g s = 3.1v i s =5a v g s = 3.8v i s =5a v g s = 4.0v i s =5a 25 c 125 c v d s = 5v v g s = 2.5v v g s = 4.5v 0 2 4 6 8 1 0 0 1 2 3 4 5 i s (a) v ss (volts) figure 1: on-region characteristics 1.5v 2 . 0v 2.5v 3.0v 3.5v 4.0v 4.5v v g s = 1.0v v g s = 3.1v v g s = 4.0v v g s = 3.8v s figure 3: on - resistance vs. source current and gate voltage 1.0e-05 1 . 0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v fss (volts) figure 6: forward source to source characteristics 25 c 125 c figure 4: on - resistance vs. junction temperature y h t ) t y e h u t p r ss(on) (m w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i s = 5a 25 c 125 c rev.1.0 february 2018 www.aosmd.com page 3 of 5
AOC3860A typical electrical and thermal characteristics 0 1 2 3 4 5 0 1 0 20 30 40 50 60 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0.1 1 1 0 1 00 1000 1e-050.00010.001 0.01 0.1 1 10 100 1000 power (w) pulse width (s) v s s = 6v i s =5a t j( m ax) =150 c t a =25 c 10 m 2 i s (amps) v ss (volts) v > or equal to 2.5v 10 m s 1ms dc r ss(o n ) limited t j (m ax) =150 c t a =25 c 100 m 2 2 pulse width (s) figure 9: single pulse power rating junction-to- a m bient (note1) 0.001 0 . 01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 z q ja no rmalized transient thermal resistance pulse width (s) figure 10: normalized maximum transient thermal impedance (note1) single pulse d=t o n / t t j,pk =t a +p dm .z q ja .r q ja t on t p d in descending order d = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 2.5v figure 8: maximum forward biased safe operating area (note1) rev.1.0 february 2018 www.aosmd.com page 4 of 5
AOC3860A test circuit 1 isss test circuit 2 igss1,2 positive vss for isss+ po sitive vgs for igss1+ negative vss for isss- negative vgs for igss1- when fet1 is measured between gate and source of fet2 are shorted test circuit 3 vgs ( off ) test circuit 4 rss ( on ) when fet1 is measured vss/is between gate and source of fet2 are shorted test circuit 5 v f(ss)1,2 test circuit 6 bv dss pos itive vss for isss+ negative vss for isss- g2 d 2 s2 g1 d1 s 1 a vss vg g 2 d 2 s2 g1 d1 s1 a g2 d2 s2 g1 d 1 s1 a vgs v s s is g2 d2 s2 g1 d 1 s1 v vgs vss s2 4.5v s2 when fet1 measured fet2 v gs=4.5v test circuit 7 bv gso1,2 test circuit 8 positive vss for isss+ switching time negative vss for isss- wh en fet1 is measured between gate and source of fet2 are shorted i f g 2 d 2 g1 d 1 s1 v vgs=0 v s s is g 2 d 2 g1 d 1 s1 v g2 d 2 s2 g1 d1 s1 v i g g2 d2 s2 g1 d 1 s1 vin vout rev.1.0 february 2018 www.aosmd.com page 5 of 5
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